sot-23 plastic-encapsulate mosfets CJ3415 p-channel 20-v(d-s) mosfet feature excellent r ds(on) , low gate charge,low gate voltages applications load switch and in pwm applicatopns marking: r15 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -20 gate-source voltage v gs 8 v continuous drain current (t 10s) i d -4.0 a maximum power dissipation (t 10s) p d 0.35 w thermal resistance from junction to ambient r ja 357 /w operating junction temperature t j 150 storage temperature t stg -55 ~+150 so t -23 1. gate 2. source 3. drain d s g 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units static parameters drain-source breakdown voltage v (br) dss v gs = 0v, i d =-250a -20 gate threshold voltage v gs(th) v ds =v gs , i d =-250a -0.3 -1 v v ds =0v, v gs =8v 10 gate-body leakage current i gss v ds =0v, v gs =4.5v 1 zero gate voltage drain current i dss v ds =-16v, v gs =0v -1 a v gs =-4.5v, i d =-4a 0.050 v gs =-2.5v, i d =-4a 0.060 drain-source on-state resistance(note1) r ds(on) v gs =-1.8v, i d =-2a 0.073 ? forward transconductance(note2) g fs v ds =-5v, i d =-4a 8 s body diode voltage(note2) v sd i s =-1a,v gs =0v -1 v dynamic parameters (note3) input capacitance c iss 1450 output capacitance c oss 205 reverse transfer capacitance c rss v ds =-10v,v gs =0v,f =1mhz 160 pf gate resistance r g v ds =0v,v gs =0v,f =1mhz 6.5 ? switching parameters total gate charge q g 17.2 gate-source charge q gs 1.3 gate-drain charge q gd v ds =-10v,v gs =-4.5v,i d =-4a 4.5 nc turn-on delay time (note3) t d(on) 9.5 turn-on rise time(note3) t r 17 turn-off delay time(note3) t d(off) 94 turn-off fall time(note3) t f v ds =-10v, v gs =-4.5v r gen =3 ? , r l =2.5 ? , 35 ns notes: 1. repetitive rating,pulse width lim ited by junction temperature. 2. pulse test : pulse width Q 300s, duty cycle Q 2%. 3. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0.0 0.2 0.4 0.6 0.8 1.0 1e-5 1e-4 1e-3 0.01 0.1 1 10 012345 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 0 2 4 6 8 10 2345678910 30 40 50 60 70 80 024681 0 30 35 40 45 50 55 60 t a =25 pulsed source to drain voltage v sd (v) source current i s (a) i s ?? v sd CJ3415 -8.0v -4.5v -3.0v drain current i d (a) drain to source voltage v ds (v) -2.5v v gs =-1.5v v gs =-2.0v t a =25 pulsed output characteristics gate to source voltage v gs (v) transfer characteristics t a =25 pulsed drain current i d (a) on-resistance r ds(on) (m ) drain current i d (a) t a =25 pulsed v gs =-4.5v v gs =-2.5v v gs =-1.8v i d ?? r ds(on) on-resistance r ds(on) (m ) gate to source voltage v gs (v) i d =-4a t a =25 pulsed v gs ?? r ds(on) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,apr,2011
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